Semiconductor Electronics Quiz-1

An intrinsic semiconductor is at a temperature of $27^\circ C$. The probability of an electron jumping from valence band to conduction band

The impurity atoms with which pure silicon should be doped to make a n-type semiconductor are those

For the same dopant concentration, the n-type silicon semiconductor has ..................... as compared to a p-type silicon semiconductor.

At thermal equilibrium, the concentration of majority carriers in an n-type extrinsic semiconductor is

In a p-type semiconductor, the concentration of holes is$2 \times 10^{15} cm^{-3}$. The intrinsic carrier concentration is $2 \times 10^{10} cm^{-3}$. The concentration of electrons will be.

In a semiconductor doped with phosphorous the Fermi–level is 0.3 eV below condition band $27^\circ C$. The temperature is raised by $30^\circ C$. The new Fermi–level is

The width of depletion region in a p–n junction diode is 500 nm and an intense electric field of $6\times10^5$ V/m is also found to exist. The height of potential barrier is

In a junction diode, I is current when applied forward bias voltage is V at a temperature T on Kelvin scale. Then

A silicon PN diode has a reverse saturation current of $20\;\mu A$ at a temperature of $20^\circ C$. The reverse saturation current of the same diode at a temperature of $40^\circ C$ will be,

For a Zener diode; which of the following statements is correct?