An intrinsic semiconductor is at a temperature of $27^{\circ }C27^\backslash circ\; C$. The probability of an electron jumping from valence band to conduction band

The impurity atoms with which pure silicon should be doped to make a n-type semiconductor are those

For the same dopant concentration, the n-type silicon semiconductor has ..................... as compared to a p-type silicon semiconductor.

At thermal equilibrium, the concentration of majority carriers in an n-type extrinsic semiconductor is

In a p-type semiconductor, the concentration of holes is$2\times 10^{15}c{m}^{-3} 2\; \backslash times\; 10^\{15\}\; cm^\{-3\}$. The intrinsic carrier concentration is $2\times 10^{10}c{m}^{-3}2\; \backslash times\; 10^\{10\}\; cm^\{-3\}$. The concentration of electrons will be.

In a semiconductor doped with phosphorous the Fermi–level is 0.3 eV below condition band $27^{\circ }C27^\backslash circ\; C$. The temperature is raised by $30^{\circ }C30^\backslash circ\; C$. The new Fermi–level is

The width of depletion region in a p–n junction diode is 500 nm and an intense electric field of $6\times 10^{5}6\backslash times10^5$ V/m is also found to exist. The height of potential barrier is

In a junction diode, I is current when applied forward bias voltage is V at a temperature T on Kelvin scale. Then

A silicon PN diode has a reverse saturation current of $20\mu A20\backslash ;\backslash mu\; A$ at a temperature of $20^{\circ }C20^\backslash circ\; C$. The reverse saturation current of the same diode at a temperature of $40^{\circ }C40^\backslash circ\; C$ will be,

For a Zener diode; which of the following statements is correct?